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| SOT23 NPN SILICON PLANAR SWITCHING TRANSISTORS ISSUE 3 FEBRUARY 1996 FEATURES * Fast switching PARTMARKING DETAILS FMMT2222 1BZ FMMT2222A 1P FMMT2222R 2P FMMT2222AR 3P COMPLEMENTARY TYPES FMMT2222 FMMT2907 FMMT2222A FMMT2907A FMMT2222 FMMT2222A C B E ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation at Tamb=25C SYMBOL VCBO VCEO VEBO IC Ptot FMMT2222 60 30 5 600 330 -55 to +150 FMMT2222A 75 40 6 UNIT V V V mA mW C Operating and Storage Temperature Range Tj:Tstg PARAMETER SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Static Forward Current Transfer Ratio FMMT2222 FMMT2222A UNIT CONDITIONS. MIN. MAX. MIN. MAX. 60 75 V IC=10A, IE=0 30 5 10 10 IEBO ICEX VCE(sat) VBE(sat) hFE 0.6 35 50 75 35 100 50 30 10 10 0.3 1.0 2.0 2.6 40 6 10 10 10 10 0.3 1.0 1.2 2.0 V V A A IC=10mA, IB=0 IE=10A, IC=0 VCB=50V, IE=0 VCB=60V, IE=0 VCB=50V, IE=0, Tamb=150C VCB=60V, IE=0, Tamb=150C VEB=3V, IC=0 VCE=60V, VEB(off)=3V IC=150mA, IB=15mA* IC=500mA, IB=50mA* IC=150mA, IB=15mA* IC=500mA, IB=50mA* IC=0.1mA, VCE=10V* IC=1mA, VCE=10V IC=10mA, VCE=10V* IC=10mA, VCE=10V, Tamb=-55C IC=150mA, VCE=10V* IC=150mA, VCE=1V* IC=500mA, VCE=10V* nA nA nA nA V V V V 0.6 35 50 75 35 100 50 40 300 300 *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% Spice parameter data is available upon request for this device FMMT2222 FMMT2222A ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER SYMBOL fT Cobo Cibo td tr ts tf Transition Frequency Output Capacitance Input Capacitance Delay Time Rise Time Storage Time Fall Time FMMT2222 MIN. MAX. 250 8 30 10 25 225 60 FMMT2222A MIN. MAX. 300 8 25 10 25 225 60 UNIT MHz pF pF ns ns ns ns CONDITIONS. IC=20mA, VCE=20V f=100MHz VCB=10V, IE=0, f=140KHz VEB=0.5V, IC=0 f=140KHz VCC=30V, VBE(off) =0.5V IC=150mA, IB1=15mA (See Delay Test Circuit) VCC=30V, IC=150mA IB1= IB2=15mA (See Storage Test Circuit) DELAY AND RISE TEST CIRCUIT +30V Generator rise time <2ns Pulse width (t1)<200ns Duty cycle = 2% 9.9V 619 200 0 0.5V Scope: Rin > 100 k Cin < 12 pF Rise Time < 5 ns STORAGE TIME AND FALL TIME TEST CIRCUIT +30V =100s <5ns +16.2 V 0 1K -13.8 V =500s 1N916 -3V Scope: Rin > 100 k Cin < 12 pF Rise Time < 5 ns Duty cycle = 2% |
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